1.1200V/90A Cree or Rohm SiC MOSFET with SiC Diode used.
2.2 paralleled 1200V/40A IGBT could also be assembled in.
3.Suitable for research or demonstration
4.DC Voltage Max: 850V （Film Capacitor）
5.15kW （DC≤850V, Io≤30Arms, Switching Frequency≤200kHz, depending on heat sink and other conditions )
6.SiC MOSFET is driven by ACPL-P349 (Delay time≤50ns )
7.DC Voltage detection by isolation Amplifier: ACPL-C87A (600:1)
8.3 Phase AC output current detection by isolation Amp: ACPL-C79A
9.Controll circuit is powered by a single +5V(>1A) power supply.
Double Pulse Test Configuration
Double Pulse Test: Waveform
Power Loss Test: Data
High Current Turn Off Test
Power Loss Simulation Result